12N10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-737.E



PARAMETER

SYMBOL

RATINGS

UNIT

100

V

Gate-Source Voltage

±20

V

Drain Current

Continuous

12

A

8.5

A

Pulsed (Note 2)

48

A

Power Dissipation

TO-220

73

W

TO-251/TO-252

30

SOP-8

5

Avalanche Energy (Note 3)

100

mJ

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Pulse width limited by safe operating area



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

TO-220

62.5

°C/W

TO-251/TO-252

100

SOP-8

75 (Note)

Junction to Case

TO-220

1.71

°C/W

TO-251/TO-252

4.1

SOP-8

25 (Note)

Note: Device mounted on 1in