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UTT12P10G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTT12P10G-TN3-R
功能描述  P-CHANNEL POWER MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT12P10G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTT12P10G-TN3-R Datasheet HTML 1Page - Unisonic Technologies UTT12P10G-TN3-R Datasheet HTML 2Page - Unisonic Technologies UTT12P10G-TN3-R Datasheet HTML 3Page - Unisonic Technologies UTT12P10G-TN3-R Datasheet HTML 4Page - Unisonic Technologies UTT12P10G-TN3-R Datasheet HTML 5Page - Unisonic Technologies UTT12P10G-TN3-R Datasheet HTML 6Page - Unisonic Technologies  
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UTT12P10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-722.F
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Continuous,
VGSS@-10V
TC=25°C
ID
-12
A
Pulsed (Note 2)
IDM
-48
A
Drain Current
Single Pulsed (Note 2)
EAS
60
mJ
Power Dissipation (TC=25°C)
PD
125
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. VDD=-25V, starting TJ=25°C, L=0.83mH, RG=25Ω, IAS=12A. (See Figure 2)
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
θJC
1.0
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-100
V
Drain-Source Leakage Current
IDSS
VDS=-100V, VGS=0V
-1
µA
Forward
VGS=+20V
+100 nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-12A (Note 2)
0.2
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
1400
pF
Output Capacitance
COSS
590
pF
Reverse Transfer Capacitance
CRSS
VDS=-25V, VGS=0V, f=1.0MHz
140
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
40
50
ns
Rise Time
tR
38
45
ns
Turn-OFF Delay Time
tD(OFF)
314
330
ns
Fall-Time
tF
VDD=-50V, ID=-12A, RG=9.1Ω,
RD = 2.4Ω, See Fig. 1(Note 2)
66
75
ns
Total Gate Charge
QG
35
40
nC
Gate to Source Charge
QGS
8
nC
Gate to Drain ("Miller") Charge
QGD
VDS=-80V, VGS=-10V, ID=-12A,
See Fig 3 (Note 2)
6
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-12
A
Maximum Body-Diode Pulsed Current
ISM
(Note 1)
-48
A
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=-12A,VGS=0V(Note 2)
-5.0
V
Body Diode Reverse Recovery Time
tRR
130
260
ns
Body Diode Reverse Recovery Charge
QRR
TJ=25°C, IF=-12A,
di/dt=100A/µs (Note 2)
0.35 0.70
µC
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width ≤ 300µs; duty cycle ≤ 2%.



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