数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

UTT120P06L-TQ2-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UTT120P06L-TQ2-R
功能描述  P-CHANNEL POWER MOSFET
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UTT120P06L-TQ2-R 数据表(HTML) 2 Page - Unisonic Technologies

  UTT120P06L-TQ2-R Datasheet HTML 1Page - Unisonic Technologies UTT120P06L-TQ2-R Datasheet HTML 2Page - Unisonic Technologies UTT120P06L-TQ2-R Datasheet HTML 3Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
UTT120P06
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-728.b
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
TC=25°C
ID
-120
A
TC=125°C
-95
A
Pulsed
IDM
-480
A
Single Pulsed Avalanche Energy
L=-0.1mH
EAS
281 (Note 2)
mJ
Power Dissipation
TO-220
PD
192
W
TO-263
178
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Duty cycle≦1%
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62
°C/W
Junction to Case
TO-220
θJC
0.65
°C/W
TO-263
0.70
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VGS=0V
-60
V
Drain-Source Leakage Current
IDSS
VDS=-60V, VGS=0V
-1
µA
VDS=-60V,VGS=0V,TC=125°C
-50
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-30A
5.5
6.9
mΩ
VGS=-4.5V, ID=-30A
7.0
8.8
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=-25V, f=1.0MHz
11400
pF
Output Capacitance
COSS
1200
pF
Reverse Transfer Capacitance
CRSS
900
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS=-30V, VGS=-10V, ID=-110A
230
345
nC
Gate to Source Charge
QGS
50
nC
Gate to Drain Charge
QGD
60
nC
Turn-ON Delay Time
tD(ON)
VDD=-30V, VGS=-10V, ID=-110A,
RG=2.5Ω, RL=0.27Ω
20
ns
Rise Time
tR
160
240
ns
Turn-OFF Delay Time
tD(OFF)
200
ns
Fall-Time
tF
240
360
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-120
A
Maximum Body-Diode Pulsed Current
ISM
-480
A
Drain-Source Diode Forward Voltage
VSD
IS=-120A, VGS=0V
-1.0
-1.5
V
Body Diode Reverse Recovery Time
trr
IF=-85A, dIF/dt=100A/µs
65
100
ns
Body Diode Reverse Recovery Charge
QRR
0.14
0.32
nC
Notes: 1. Pulse test, pulse width≦300µS, duty cycle≦2%



Html Pages

1 2 3


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com