CSD18536KCS datasheet(3/11 Pages) TI

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CSD18536KCS

www.ti.com

SLPS532 – MARCH 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 250 μA

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 48 V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 20 V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250 μA

1.4

1.8

2.2

VGS = 4.5 V, ID = 100 A

1.7

2.2

Ω

RDS(on)

Drain-to-Source On-Resistance

VGS = 10 V, ID = 100 A

1.3

1.6

Ω

gƒs

Transconductance

VDS = 6 V, ID = 100 A

312

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

8790

11430

Coss

Output Capacitance

VGS = 0 V, VDS = 30 V, ƒ = 1 MHz

1700

2210

Crss

Reverse Transfer Capacitance

Series Gate Resistance

0.7

1.4

Ω

Gate Charge Total (10 V)

108

Qgd

Gate Charge Gate-to-Drain

VDS = 30 V, ID = 100 A

Qgs

Gate Charge Gate-to-Source

Qg(th)

Gate Charge at Vth

Qoss

Output Charge

VDS = 30 V, VGS = 0 V

230

td(on)

Turn On Delay Time

Rise Time

VDS = 30 V, VGS = 10 V,

IDS = 100 A, RG = 0 Ω

td(off)

Turn Off Delay Time

tƒ

Fall Time

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 100 A, VGS = 0 V

0.9

1.0

Qrr

Reverse Recovery Charge

323

VDS= 30 V, IF = 100 A,

di/dt = 300 A/

μs

trr

Reverse Recovery Time

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

MIN

TYP

MAX

UNIT

RθJC

Junction-to-Case Thermal Resistance

0.4

°C/W

RθJA

Junction-to-Ambient Thermal Resistance

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