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88NXXL-AD4-R 数据表(PDF) 7 Page - Unisonic Technologies |
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88NXXL-AD4-R 数据表(HTML) 7 Page - Unisonic Technologies |
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7 / 8 page ![]() 88NXX CMOS IC UNISONICTECHNOLOGIESCO.,LTD 7 of 8 www.unisonic.com.tw QW-R502-368.G ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified) Detection Voltage: 3.3V PARAMETER SYMBOL TEST CIRCUIT TEST CONDITIONS MIN TYP MAX UNIT Detection Voltage (Note 1) -VDET 1 -VDET(S) ×0.98 -VDET(S) -VDET(S) ×1.02 V Hysteresis Width VHYS 1 -VDET ×0.02 -VDET ×0.05 -VDET ×0.08 V Current Consumption ISS 2 VDD=4.5V 5 μA Operating Voltage VDD 1 0.95 10.0 V Output Current IOUT 3 Output transistor Nch, VDS=0.5V, VDD=2.4V 2.88 4.98 mA Leakage Current ILEAK 3 Output transistor Nch, VDS=10V, VDD=10V 0.1 μA Detection Voltage Temperature Coefficient (Note 2) DET DET V - × Ta ∆ V - ∆ 1 TA=-40°C ~ +85°C ±100 ±350 ppm/°C Delay Time tD 4 VDD=4.5V, CD=4.7 nF 12 34 ms Note: 1. -VDET: Actual detection voltage -VDET(S): Specified detection voltage 2. The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation: (1) ( 2 ) ( 3 ) DET DET DET AA DET -V -V [m V/ C] -V (Typ.)[V ] [ppm / C] 1000 TT -V (1) Temperature change ratio of the detection voltage (2) Specified detection voltage (3) Detection voltage temperature coefficient |
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