US3602

Preliminary

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-985.b



ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

-0.3~20

V

Feedback Pin Input Voltage

FB

-0.3~6

V

Internal MOSFET Drain Voltage

Drain

-0.3~600

V

Current Sense Pin Input Voltage

CS

-0.3~6

V

Power Dissipation (Note 2)

0.45

W

Thermal Resistance (Junction to Ambient)

145

°C/W

Operating Junction Temperature

-40~150

°C

Storage Temperature Range

-55~150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

number listed in the maximum table.



RECOMMENDED OPERATION CONDITIONS

PARAMETER

SYMBOL

RATINGS

UNIT

Power Supply Voltage

7.5~14.5

V

Output Power (Input Voltage 230V±15%)

<5

W

Output Power (Input Voltage 85V~265V)

<4

W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Supply Voltage Section

Turn on Threshold Voltage

13

14

15

V

Turn off Threshold Voltage

6.5

V

16

V

23

V

Start up Current

30

50

µA

Operating Current

1

mA

Current Sense Section

Current Sense Threshold Voltage

460

500

600

mV

Leading Edge Blanking Time

500

nS

OCP Propagation Delay

300

nS

Feedback Section

FB Voltage Sense Level

1

V

Minimum Demagnetization Time

3.5

µS

Line Compensation Ratio (Note 3)

1.1

mV/µA

Maximum Duty Cycle

Maximum Duty Cycle

50

%

Over Temperature Protection

Thermal Shutdown Threshold

150

°C

Thermal Shutdown Hysteresis

25

°C

MOSFET Section

Static Drain-Source On-Resistance

13

Ω

Drain-Source Breakdown Voltage

600

V

Drain-Source Leakage Current

100

nA

Notes: 1. Production testing of the chip is performed at 25°C.

2. The maximum and minimum parameters specified are guaranteed by test, the typical value are guaranteed

by design, characterization and statistical analysis.

3. Refer to application information.