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USL1601G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 USL1601G-S08-R
功能描述  CONSTANT CURRENT CONTROLLER
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

USL1601G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies

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USL1601
Preliminary
CMOS IC
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R125-033.a
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Internal HV MOSFET Drain Voltage
VDS
-0.3~600
V
VCC Pin Maximum Sink Current
ICC_MAX
5
mA
Power Dissipation (Note 2)
PDMAX
0.5
W
Operating Junction Temperature
TJ
-40~150
°C
Storage Temperature Range
TSTG
-55~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The maximum power dissipation decrease if temperature rise, it is decided by TJMAX, θJA, and environment
temperature (TA). The maximum power dissipation is the lower one between PDMAX= (TJMAX - TA)/ θJA and
the number listed in the maximum table.
3. Human Body mode, 100pF capacitor discharge on 1.5KΩ resistor.
RECOMMENDED OPERATION CONDITIONS
PARAMETER
SYMBOL
RATINGS
UNIT
Output LED Current
ILED
< 135
mA
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
150
°C/W
ELECTRICAL CHARACTERISTICS (Note 1, 2) (Unless otherwise specified, VCC=12V and TA=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX
UNIT
Supply Voltage Section
VCC Clamping Voltage
VCC_CLAMP
12.5
V
VCC Clamping Current
IDD_CLAMP
5
mA
VCC Start Up Voltage
VCC_ST
VCC Rise
7.6
8.4
9.2
V
VCC Under Voltage Latch Out Hysteresis
VUVLO_HYS
VCC Falling
1
V
Start Up Current
IST
VCC=VCC_ST -0.5V
70
150
µA
Operation Current
IOP
3
mA
Current Sense Section
Current Sense Voltage
Threshold
VCS_TH
290
300
310
mV
Leading Edge Blanking Time
TLEB
650
ns
Turn Off Delay Time
TDELAY
100
ns
Line Compensation Section
Line Compensation Rate
Δ
VCS/∆(VLN-VCC)
-40
mV/V
Over Temperature Section
Thermal Shut Dow
Temperature
TSD
150
°C
Thermal Shut Down
Hysteresis
TSD_HYS
30
°C
Internal HV MOSFET
Switch ON Resistance
RDS_ON
VCC=12V
10
Ω
Drain to Source Voltage
VDS
600
V
Internal Driver Section
Minimum Demagnetization Time
TOFF_MIN
4
µs
Maximum Demagnetization Time
TOFF_MAX
130
µs
Maximum Turn On Time
TON_MAX
45
µs
Notes: 1. Production testing of the chip is performed at 25°C
2. The maximum and minimum parameters specified are guaranteed by test, the typical value are guaranteed
by design, characterization and statistical analysis



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