SEMICONDUCTOR

RoHS

RoHS

MAJOR RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

V

SYMBOL

MTPT150

UNIT

08

900

1300

800

1200

1600

12

16

1700

Maximum repetitive peak reverse voltage

Peak reverse non-repetitive voltage

Peak forward surge current single sine-wave superimposed on

rated load

Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)

for fusing

Operating junction temperature range

V

/

2

I t

10660

150

1460

2

A s

A

A

ºC

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

PARAMETER

V

µA

SYMBOL

MTPT150

UNIT

08

12

16

Maximum instantaneous forward drop per diode

Maximum reverse DC current at rated DC blocking

10

1.3

20

voltage per diod

TEST

CONDITIONS

F

A

A

Storage temperature range

ºC

mA

MTPT150

Maximum Ratings for Diodes

Output DC current three-phase full wave, T = 100°C

c

FORWARD CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum average on-state current

at case temperature

180° conduction, half sine wave ,50Hz

A

Maximum peak, one-cycle, on-state

non-repetitive surge current

t = 10 ms

No voltage

reapplied

Sine half wave,

t = 8.3 ms

I

t = 0.1 ms to 10 ms, no voltage reapplied

Maximum on-state voltage drop

Maximum holding current

mA

Maximum latching current

Anode supply = 12 V resistive load = 1 Ω

400

V

UNITS

VALUES

150

85

1460

1529

10.7

9.7

107

1.3

200

A

°C

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms

7.5

6.8

reapplied

Maximum Ratings for Thyristor

SWITCHING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

Typical delay time

Typical rise time

g

Typical tum-off time

I

= 300A ; dl/dt = 15 A/µs ; T = T maximum,

TM

J

J

V = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω

R

μs

50 to 150

UNITS

V = 0.67 % V

d

DRM

1

2

ºC/W

ºC/W

Thermal Impedance, junction to case

0.14

Thermal Impedance, case to heatsink

0.07

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