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USL3633G-S08-R 数据表(PDF) 3 Page - Unisonic Technologies |
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USL3633G-S08-R 数据表(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() USL3633 Preliminary LINEAR INTEGRATED CIRCUIT UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R103-097.b ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT VCC Pin Maximum Sink Current ICC_MAX 5 mA Internal HV MOSFET Drain Voltage DRAIN -0.3~600 V Current Sense Pin Input Voltage CS -0.3~6 V Over-Voltage Setting Pin Voltage ROVP -0.3~6 V Power Dissipation PD 0.45 W Junction Temperature TJ -40~+150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. RECOMMENDED OPERATION CONDITIONS PARAMETER SYMBOL RATINGS UNIT Output LED Current @ VOUT=72V (Input Voltage 176V~265V) ILED1 280 mA Output LED Current @ VOUT=36V (Input Voltage 176V~265V) ILED2 350 mA Minimum LED Loading Voltage VLED min >15 V THERMAL RESISTANCES CHARACTERISTICS PARAMETER SYMBOL RATING UNIT Junction to Ambient θJA 145 °C/W ELECTRICAL CHARACTERISTICS (Notes 1, 2) (Unless otherwise specified, VCC=14V and TA=25°C) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Supply Voltage Section VCC Clamp Voltage VCC_CLAMP 1mA 16.8 V VCC Turn On Threshold VCC_ON VCC Rising 13.8 V VCC Turn Off Threshold VCC_UVLO VCC Falling 9 V VCC Startup Current IST VCC= VCC-ON - 1V 160 250 µA VCC Operating Current IOP FOP=70KHz 200 300 µA Current Sense Section Threshold Voltage for Peak Current Limit VCS_peak 390 400 410 mV Threshold Voltage for Peak Current Limit When Output Short VCS_SHORT Output Short 200 mV Leading Edge Blanking Time for Current Sense TLEB 350 ns Switch Off Delay Time TDELAY 200 ns Internal Time Control Section Minimum OFF Time TOFF_MIN 4.5 µs Maximum OFF Time TOFF_MAX 240 µs Maximum On Time TON_MAX 35 µs ROVP Pin Voltage VROVP 0.5 V MOSFET Section Static Drain-source On-resistance RDS_ON VGS=15V/IDS=0.4A 5 Ω Drain-Source Breakdown Voltage BVDSS VGS=0V/IDS=250µA 600 V Power MOSFET Drain Leakage Current IDSS VGS=0V/VDS=600V 1 µA Thermal Regulation Section Thermal Regulation Temperature TREG 150 °C Notes: 1. Production testing of the chip is performed at 25°C. 2. The maximum and minimum parameters specified are guaranteed by test, the typical value are guaranteed by design, characterization and statistical analysis. |
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