CHA2094b

36-40GHz Low Noise Amplifier

Ref. : DSCHA20949312 – 08-Nov.-99

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C, Vd1,2,3 = 3.5V

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range (1)

36

40

GHz

G

Small signal gain (1)

18

21

dB

∆G

Small signal gain flatness (1)

±1.5

dB

∆Gsb

Gain flatness over 40MHz ( within -30 ; +75°C )

0.5

dBpp

Is

Reverse isolation (1)

25

30

dB

P1dB

Output power at 1dB gain compression

5

8

dBm

VSWRin

Input VSWR (1)

2.5:1

3.0:1

VSWRout

Output VSWR (1)

2.5:1

3.0:1

NF

Noise figure (2)

3.0

4.0

dB

Vd

DC Voltage

Vd

Vg

-2

3.5

-0.25

4

+0.4

V

V

Id

Bias current (2)

60

100

mA

(1) These values are representative of on-wafer measurements that are made without bonding

wires at the RF ports.

(2) 60 mA is the typical bias current used for on wafer measurements, with Vg1,2 = Vg3. For

optimum noise figure, the bias current could be reduced down to 40 mA, adjusting the Vg1,2

voltage.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

5.0

V

Id

Drain bias current

150

mA

Vg

Gate bias voltage

-2.0 to +0.4

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +155

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.