CHA2391

36-40GHz Very Low Noise Amplifier

Ref. : DSCHA23912240 -28-Aug.-02

2/8

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = +25°C, Bias Conditions:Vd = +4V

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

36

40

Ghz

G

Gain (1)

12

15

dB

∆G

Gain flatness (1)

± 0.5

± 1.0

dB

NF

Noise figure (1)

2.5

3

dB

VSWRin

Input VSWR (1)

3.0:1

VSWRout

Ouput VSWR (1)

3.0:1

IP3

3rd order intercept point

20

dBm

P1dB

Output power at 1dB gain compression

12

dBm

Vd

DC Voltage

Vd

Vg

-2

4

-0.25

4.5

+0.4

V

Id

Drain bias current (2)

45

mA

at the RF ports.When the chip is attached with typical 0.15nH input and output bonding wires, the

indicated parameters should be improved

.

(2) 45 mA is the typical bias current used for on wafer measurements, with Vg1= Vg2.

For optimum noise figure, the bias current could be reduced down to 30 mA, adjusting the

Vg1,2 voltage.

Tamb = +25°C

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

5.0

V

Vg

Gate bias voltage

-2.0 to +0.4

V

Vdg

Maximum drain to gate voltage (Vd-Vg)

+5.0

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Pin

Maximum continuous input power

+1

dBm

Top

Operating temperature range

-40 to +85

°C

Tsg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these paramaters may cause permanent damage.

(2) Duration < 1s.