BFS17W_15 datasheet(2/6 Pages) JMNIC

2 / 6 page

1995 Sep 04

Philips Semiconductors

Product speciﬁcation

NPN 1 GHz wideband transistor

BFS17W

APPLICATIONS

Primarily intended as a mixer,

oscillator and IF amplifier in UHF and

VHF tuners.

DESCRIPTION

Silicon NPN transistor in a plastic

SOT323 (S-mini) package. The

BFS17W uses the same crystal as

the SOT23 version, BFS17.

PINNING

DESCRIPTION

base

emitter

collector

Fig.1 SOT323

handbook, 2 columns

MBC870

Top view

Marking code: E1

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

−−

VCEO

collector-emitter voltage

−−

DC collector current

−−

Ptot

total power dissipation

up to Ts =118 °C; note 1

−−

300

hFE

DC current gain

IC = 2 mA; VCE = 1 V

−

transition frequency

IC = 25 mA; VCE =5V

−

1.6

−

GHz

collector capacitance

IE = 0; VCB = 10 V; f = 1 MHz

−

0.8

1.5

Cre

feedback capacitance

IC = 1 mA; VCE =5V; f=1MHz

−

0.75

−

junction temperature

−−

175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

2.5

collector current (DC)

−

Ptot

total power dissipation

Ts =118 °C; note 1

−

300

Tstg

storage temperature

−65

+150

°C

junction temperature

−

175

°C

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