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BFS520 数据表(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

部件名 BFS520
功能描述  NPN 9 GHz wideband transistor
PDF  11 Pages
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制造商  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
网页  http://www.jmnic.com
标志 JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BFS520 数据表(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS520
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.
PINNING
PIN
DESCRIPTION
Code: N2
1
base
2
emitter
3
collector
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−
20
V
VCES
collector-emitter voltage
RBE =0
−−
15
V
IC
DC collector current
−−
70
mA
Ptot
total power dissipation
up to Ts =118 °C; note 1
−−
300
mW
hFE
DC current gain
IC = 20 mA; VCE = 6 V; Tj =25 °C
60
120
250
fT
transition frequency
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb =25 °C
−
9
−
GHz
GUM
maximum unilateral power gain
Ic = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
−
15
−
dB
F
noise figure
Ic = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
−
1.1
1.6
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE =0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
70
mA
Ptot
total power dissipation
up to Ts =118 °C; note 1
−
300
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C



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