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BFS540 数据表(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

部件名 BFS540
功能描述  NPN 9 GHz wideband transistor
PDF  12 Pages
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制造商  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
网页  http://www.jmnic.com
标志 JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BFS540 数据表(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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2000 May 30
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 package.
APPLICATIONS
RF wideband amplifier applications
such as satellite TV systems and RF
portable communication equipment
with signal frequencies up to 2 GHz.
DESCRIPTION
NPN transistor in a SOT323 plastic
package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
Marking code: N4.
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−
20
V
VCEO
collector-emitter voltage
open base
−−
15
V
IC
DC collector current
−−
120
mA
Ptot
total power dissipation
Ts ≤ 80 °C; note 1
−−
500
mW
hFE
DC current gain
IC = 40 mA; VCE =8V; Tj =25 °C
100
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
−
9
−
GHz
GUM
maximum unilateral power gain
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
−
14
−
dB
F
noise figure
IC = 10 mA; VCE = 8 V; f = 900 MHz;
Tamb =25 °C
−
1.3
1.7
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCES
collector-emitter voltage
RBE =0
−
15
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
120
mA
Ptot
total power dissipation
Ts ≤ 80 °C; note 1
−
500
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
175
°C



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