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BLF202 数据表(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BLF202 数据表(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 16 page ![]() 1999 Oct 20 2 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF202 FEATURES • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor in an 8-lead SOT409A SMD package with a ceramic cap. PINNING - SOT409A PIN DESCRIPTION 1, 8 source 2, 3 gate 4, 5 source 6, 7 drain handbook, halfpage MBK150 Top view 14 85 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb =25 °C in a common source test circuit. MODE OF OPERATION f (MHz) VDS (V) PL (W) Gp (dB) η D (%) CW, class-B 175 12.5 2 >10 >50 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. |
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