FST10040 datasheet(1/3 Pages) GENESIC

部件名	FST10040

功能描述	High Surge Capability

PDF	3 Pages

Scroll/Zoom	100%

制造商	GENESIC [GeneSiC Semiconductor, Inc.]

网页	http://www.genesicsemi.com/

标志

1 / 3 page

VRRM = 20 V - 40 V

IF(AV) = 100 A

Features

• High Surge Capability

TO-249AB Package

• Types from 20 V to 40V VRRM

• Isolated to Plate

• Not ESD Sensitive

Parameter

Symbol

FST10020

FST10030

Unit

Repetitive peak reverse voltage

VRRM

20

30

V

RMS reverse voltage

VRMS

14

21

V

DC blocking voltage

VDC

20

30

V

40

35

FST10020 thru FST10040

FST10040

35

25

FST10035

Maximum ratings, at Tj = 25 °C, unless otherwise specified

40

28

Conditions

Silicon Power

Schottky Diode

DC blocking voltage

VDC

20

30

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

FST10020

FST10030

Unit

Average forward current (per

pkg)

IF(AV)

100

A

Maximum instantaneous

forward voltage (per leg)

0.70

11

10

30

Thermal characteristics

Thermal resistance, junction -

case (per leg)

R

ΘJC

1.0

°C/W

40

35

-55 to 150

FST10040

11

FST10035

1.0

Tj = 150 °C

1.0

0.70

30

mA

V

Tj = 100 °C

30

Tj = 25 °C

IFM = 50 A, Tj = 25 °C

10

Conditions

-55 to 150

VF

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

TC = 125 °C

100

Peak forward surge current (per

leg)

IFSM

tp = 8.3 ms, half sine

1000

A

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

IR

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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