PJS6601 datasheet(1/9 Pages) PANJIT

部件名	PJS6601

功能描述	20V Complementary Enhancement Mode MOSFET

PDF	9 Pages

Scroll/Zoom	100%

制造商	PANJIT [Pan Jit International Inc.]

网页	http://www.panjit.com.tw

标志

1 / 9 page

PPJS6601

September 18,2015-REV.00

Page 1

20V Complementary Enhancement Mode MOSFET

Voltage

20 / -20V

Current

4.1 /-3.1A

SOT-23 6L

Unit: inch(mm)

Features



Advanced Trench Process Technology



Specially Designed for Switch Load, PWM Application, etc.



Lead free in compliance with EU RoHS 2011/65/EU

directive



Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-23 6L Package



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.0005 ounces, 0.014 grams



Marking: SC1

PARAMETER

SYMBOL

N-Ch LIMIT

P-Ch LIMIT

UNITS

Drain-Source Voltage

VDS

20

-20

V

Gate-Source Voltage

VGS

+12

V

Continuous Drain Current

ID

4.1

-3.1

A

Pulsed Drain Current

(Note 4)

IDM

16.4

-12.4

A

Power Dissipation

Ta=25

oC

PD

1.25

W

Derate above 25

oC

10

mW/

oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal Resistance

-

Junction to Ambient

(Note 3)

RθJA

100

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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