MBRT400100R datasheet(1/3 Pages) GENESIC

部件名	MBRT400100R

功能描述	High Surge Capability

PDF	3 Pages

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制造商	GENESIC [GeneSiC Semiconductor, Inc.]

网页	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 45 V - 100 V

IF(AV) = 400 A

Features

• High Surge Capability

Three Tower Package

• Types from 45 V to 100 V VRRM

• Isolation Type Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

MBRT40045(R) MBRT40060(R)

Unit

Repetitive peak reverse voltage

VRRM

45

60

V

RMS reverse voltage

VRMS

32

42

V

DC blocking voltage

VDC

45

60

V

Silicon Power

Schottky Diode

MBRT40045 thru MBRT400100R

MBRT400100(R)

80

56

MBRT40080(R)

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Conditions

100

70

100

80

DC blocking voltage

VDC

45

60

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBRT40045(R) MBRT40060(R)

Unit

Average forward current (per

pkg)

IF(AV)

400

A

Maximum instantaneous forward

voltage (per leg)

0.70

0.75

11

10

50

Thermal characteristics

Maximum thermal resistance,

junction - case (per leg)

R

ΘJC

0.35

°C/W

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

VF

10

0.35

Tj = 100 °C

0.35

Tj = 25 °C

IFM = 200 A, Tj = 25 °C

Conditions

-55 to 150

MBRT400100(R)

11

MBRT40080(R)

-55 to 150

100

80

TC =125 °C

400

Peak forward surge current (per

leg)

IFSM

tp = 8.3 ms, half sine

3000

A

Maximum Instantaneous reverse

current at rated DC blocking

voltage (per leg)

IR

Tj = 150 °C

50

mA

0.84

10

V

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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