数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

PJS6603 数据表(PDF) 2 Page - Pan Jit International Inc.

部件名 PJS6603
功能描述  30V Complementary Enhancement Mode MOSFET
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  PANJIT [Pan Jit International Inc.]
网页  http://www.panjit.com.tw
标志 PANJIT - Pan Jit International Inc.

PJS6603 数据表(HTML) 2 Page - Pan Jit International Inc.

  PJS6603 Datasheet HTML 1Page - Pan Jit International Inc. PJS6603 Datasheet HTML 2Page - Pan Jit International Inc. PJS6603 Datasheet HTML 3Page - Pan Jit International Inc. PJS6603 Datasheet HTML 4Page - Pan Jit International Inc. PJS6603 Datasheet HTML 5Page - Pan Jit International Inc. PJS6603 Datasheet HTML 6Page - Pan Jit International Inc. PJS6603 Datasheet HTML 7Page - Pan Jit International Inc. PJS6603 Datasheet HTML 8Page - Pan Jit International Inc. PJS6603 Datasheet HTML 9Page - Pan Jit International Inc.  
Zoom Inzoom in Zoom Outzoom out
 2 / 9 page
background image
PPJS6603
September 18,2015-REV.00
Page 2
N-Channel Electrical Characteristics (TA=25
o
C unless otherwise noted)
NOTES :
1.
Pulse width<300us, Duty cycle<2%
2.
Essentially independent of operating temperature typical characteristics.
3.
RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.
4.
The maximum current rating is package limited.
5.
Guaranteed by design, not subject to production testing
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
Static
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250uA
30
-
-
V
Gate Threshold Voltage
VGS(th)
VDS=VGS, ID=250uA
1.0
1.37
2.1
V
Drain-Source On-State Resistance
RDS(on)
VGS=10V, ID=4.4A
-
36
48
m
Ω
VGS=4.5V, ID=2.8A
-
52
70
Zero Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
-
-
1
uA
Gate-Source Leakage Current
IGSS
VGS=+20V, VDS=0V
-
-
+100
nA
Dynamic
(Note 5)
Total Gate Charge
Qg
VDS=15V, ID=4.4A,
VGS=10V
(Note 1,2)
-
5.8
-
nC
Gate-Source Charge
Qgs
-
1
-
Gate-Drain Charge
Qgd
-
1
-
Input Capacitance
Ciss
VDS=15V, VGS=0V,
f=1.0MHZ
-
235
-
pF
Output Capacitance
Coss
-
36
-
Reverse Transfer Capacitance
Crss
-
24
-
Turn-On Delay Time
td(on)
VDD=15V, ID=4.4A,
VGS=10V,
RG=6Ω
(Note 1,2)
-
3
-
ns
Turn-On Rise Time
tr
-
39
-
Turn-Off Delay Time
td(off)
-
23
-
Turn-Off Fall Time
tf
-
28
-
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
IS
---
-
-
1.5
A
Diode Forward Voltage
VSD
IS=1.0A, VGS=0V
-
0.8
1.2
V



Html Pages

1 2 3 4 5 6 7 8 9


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com