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2SD880G-AB3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2SD880G-AB3-R
功能描述  NPN EPITAXIAL TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SD880G-AB3-R 数据表(HTML) 2 Page - Unisonic Technologies

  2SD880G-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SD880G-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SD880G-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SD880G-AB3-R Datasheet HTML 4Page - Unisonic Technologies  
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2SD880
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-013.G
ABSOLUTE MAXIMUM RATINGS (T
A =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7
V
Collector Current
IC
3
A
Base Current
IB
0.5
A
Power Dissipation
SOT-89
TA=25
PD
0.55
W
TO-220
1.5
SOT-89
TC=25
3
TO-220
30
Junction Temperature
TJ
150
W
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (T
A =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=50mA, IE=0
60
V
Collector Cut-Off Current
ICBO
VCB=60V, IE=0
100
µA
Emitter Cut-Off Current
IEBO
VEB=7V, IC=0
100
µA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=3A, IB=300mA
1
V
Base-Emitter Saturation Voltage
VBE(ON)
VCE=5V, IC=500mA
1
V
DC Current Gain
hFE
IC=500mA, VCE=5V
100
200
Current gain bandwidth product
fT
VCE=5V, IC=500mA
3
MHZ



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