2SD2470

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R216-003.I



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

15

V

Collector-Emitter Voltage

10

V

Emitter-Base Voltage

10

V

Collector Current (DC)

5

A

Collector Current (PULSE) (Note 2)

8

A

Collector Power Dissipation

SOT-89

0.5

W

TO-92SP

0.4

W

Junction Temperature

+150

°C

Storage Temperature

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Single Pulse =10ms



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector Base Breakdown Voltage

15

V

Collector Emitter Breakdown Voltage

10

V

Emitter Base Breakdown Voltage

10

V

Collector Cut-Off Current

0.1

μA

Emitter Cut-Off Current

0.5

μA

DC Current Gain

270

820

Collector-Emitter Saturation Voltage

0.25

0.5

V

Transition Frequency

170

MHz

Output Capacitance

30

pF



RANK

S

E

RANGE

270~560

450~820