PJS6413 datasheet(1/6 Pages) PANJIT

部件名	PJS6413

功能描述	20V P-Channel Enhancement Mode MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	PANJIT [Pan Jit International Inc.]

网页	http://www.panjit.com.tw

标志

1 / 6 page

PPJS6413

December 31,2014-REV.03

Page 1

20V P-Channel Enhancement Mode MOSFET

Voltage

-20 V

Current

-4.4A

SOT-23 6L-1

Unit : inch(mm)

Features



RDS(ON) , VGS@-4.5V, ID@-4.4A<82m

Ω



RDS(ON) , VGS@-2.5V, ID@-2.8A<110m

Ω



RDS(ON) , VGS@-1.8V, ID@-1.5A<146m

Ω



Advanced Trench Process Technology



Specially Designed for Switch Load, PWM Application, etc



Lead free in compliance with EU RoHS 2011/65/EU

directive.



Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-23 6L-1 Package



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.0005 ounces, 0.014 grams



Marking: S13

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

-20

V

Gate-Source Voltage

VGS

+12

V

Continuous Drain Current

ID

-4.4

A

Pulsed Drain Current

IDM

-17.6

A

Power Dissipation

Ta=25

oC

PD

2

W

Derate above 25

oC

16

mW/

oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal resistance

-

Junction to Ambient

(Note 3)

RθJA

62.5

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

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