PJS6809 datasheet(1/6 Pages) PANJIT

部件名	PJS6809

功能描述	30V P-Channel Enhancement Mode MOSFET

PDF	6 Pages

Scroll/Zoom	100%

制造商	PANJIT [Pan Jit International Inc.]

网页	http://www.panjit.com.tw

标志

1 / 6 page

PPJS6809

June 8,2015-REV.03

Page 1

30V P-Channel Enhancement Mode MOSFET

Voltage

-30 V

Current

-2.6A

SOT-23 6L

Unit : inch(mm)

Features



RDS(ON) , VGS@-10V, ID@-2.6A<115m

Ω



RDS(ON) , VGS@-4.5V, ID@-1.7A<150m

Ω



Advanced Trench Process Technology



Specially Designed for Switch Load, PWM Application, etc.



Lead free in compliance with EU RoHS 2011/65/EU

directive.



Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-23 6L Package



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight: 0.0005 ounces, 0.014 grams



Marking: ST9

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

+20

V

Continuous Drain Current

ID

-2.6

A

Pulsed Drain Current

IDM

-10.4

A

Power Dissipation

Ta=25

oC

PD

1.25

W

Derate above 25

oC

10

mW/

oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal resistance

-

Junction to Ambient

(Note 3)

RθJA

100

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)

类似零件编号 - PJS6809

制造商	部件名	数据表	功能描述
Pan Jit International I...	PJS6809	346Kb / 6P	30V P-Channel Enhancement Mode MOSFET January 20,2022
	PJS6809-AU	345Kb / 6P	30V P-Channel Enhancement Mode MOSFET January 20,2022 PJS6809-AU-REV.01
	PJS6809-AU_S1_000A1	345Kb / 6P	30V P-Channel Enhancement Mode MOSFET January 20,2022 PJS6809-AU-REV.01
	PJS6809_S1_00001	346Kb / 6P	30V P-Channel Enhancement Mode MOSFET January 20,2022
	PJS6809_S2_00001	346Kb / 6P	30V P-Channel Enhancement Mode MOSFET January 20,2022

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类似说明 - PJS6809

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