D965SSG-X-AE3-R datasheet(2/4 Pages) UTC

2 / 4 page

D965SS / D965ASS

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R206-016.D



ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base voltage

VCBO

D965SS

Collector-Emitter Voltage

D965ASS

VCEO

Emitter-Base Voltage

VEBO

Collector dissipation(Ta=25

C)

750

Collector current

Junction Temperature

150

C

Storage Temperature

TSTG

-65 ~ +150

C



ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-base breakdown voltage

BVCBO

IC=100μA, IE=0

D965SS

Collector-emitter breakdown

voltage

D965ASS

BVCEO

IC=1mA, IB=0

Emitter-base breakdown voltage

BVEBO

IC =0, IE=10μA

Collector cut-off current

ICBO

VCB=10V, IE=0

100

Emitter cut-off current

IEBO

VEB=7V, IC=0

100

hFE1

VCE=2V, IC=1mA

200

hFE2

VCE=2V, IC=0.5A

230

800

DC current gain

hFE3

VCE=2V, IC=2A

150

Collector-emitter saturation voltage

VCE(SAT)

Ic=3A, IB= 0.1A

Current gain bandwidth product

VCE=6V,IC=50mA

150

MHz

Output capacitance

Cob

VCB=20V,IE=0, f=1MHz



CLASSIFICATION OF hFE2

RANK

RANGE

230~380

340~600

560~800

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