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T2096G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 T2096G-TN3-R
功能描述  HIGH VOLTAGE TRANSISTOR
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

T2096G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  T2096G-TN3-R Datasheet HTML 1Page - Unisonic Technologies T2096G-TN3-R Datasheet HTML 2Page - Unisonic Technologies T2096G-TN3-R Datasheet HTML 3Page - Unisonic Technologies T2096G-TN3-R Datasheet HTML 4Page - Unisonic Technologies  
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T2096
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R213-017. C
ABSOLUATE MAXIUM RATINGS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
800
V
Collector-Emitter Voltage
VCES
800
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
8
V
Base Current
IB
1
A
DC Collector Current
IC
2
A
Pulse Collector Current (Note 2)
ICP
4
A
TA=25C
1
Collector Dissipation
TC=25C
PC
15
W
Junction Temperature
TJ
150
C
Storage Temperature
TSTG
-55 ~ +150
C
Note:1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse Test: Pulse Width ≤300μS, Duty Cycle≤10%
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC =1mA, IE =0
800
V
Collector-Emitter Breakdown Voltage
BVCEO
IC =5mA, RBE=∞
400
V
Emitter-Base Breakdown Voltage
BVEBO
IE =1mA, IC =0
8
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =1A, IB =0.2A
0.8
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC =1A, IB =0.2A
1.5
V
Collector Cutoff Current
ICBO
VCB =400V, IE =0
10
μA
Emitter Cutoff Current
IEBO
VEB =5V, IC =0
10
μA
hFE 1
VCE =5V, IC =1mA
45
DC Current Gain
hFE 2
VCE =5V, IC =0.2A
120
180
Current Gain-Bandwidth Product
fT
VCE =10V, IC =0.2A
20
MHz
Output Capacitance
Cob
VCB =10V, f =1MHz
20
pF
Turn-on Time
tON
0.5
μs
Storage Time
tSTG
2.5
μs
Fall Time
tF
IC =1.0A, IB1 =0.05A
IB2 = -0.5A, RL =200Ω
VCC=200V
0.3
μs



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