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HJ44H11L-AA3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 HJ44H11L-AA3-R
功能描述  NPN EPITAXIAL PLANAR TRANSISTOR
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

HJ44H11L-AA3-R 数据表(HTML) 2 Page - Unisonic Technologies

  HJ44H11L-AA3-R Datasheet HTML 1Page - Unisonic Technologies HJ44H11L-AA3-R Datasheet HTML 2Page - Unisonic Technologies HJ44H11L-AA3-R Datasheet HTML 3Page - Unisonic Technologies  
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HJ44H11
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R209-024.D
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector- Emitter Voltage
VCEO
80
V
Collector-Emitter Voltage
VCES
80
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
8
A
Base Current
IB
5
A
Power Dissipation (TC=25℃)
SOT-223
PD
5
W
TO-220
65
TO-252
20
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55~+150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Emitter Breakdown Voltage
BVCEO
IC=30mA, IB=0
80
V
Collector-Emitter Breakdown Voltage
BVCES
IC=1mA, IB=0
80
V
Emitter-Base Breakdown Voltage
BVEBO
IE=1mA, IC=0
5
V
Collector Cut-Off Current
ICES
VCB=80V, VEB=0
10
uA
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
50
uA
Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=8A, IB=0.4A
1
V
Base-Emitter Saturation Voltage(Note)
VBE(SAT) IC=8A, IB=0.8A
1.5
V
DC Current Gain (Note)
hFE1
VCE=1V, IC=2A
60
hFE2
VCE=1V, IC=4A
40
Output Capacitance
COB
VCB=10V
130
pF
Transition Frequency
fT
VCE=10V, IC=500mA, f=20MHz
50
MHz
Note: Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%



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