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MIC5022 数据表(PDF) 4 Page - Micrel Semiconductor |
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MIC5022 数据表(HTML) 4 Page - Micrel Semiconductor |
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4 / 9 page ![]() September 1999 181 MIC5022 MIC5022 Micrel Electrical Characteristics T A = 25°C, Gnd = 0V, VDD = 12V, Gate CL = 1500pF (IRF540 MOSFET) unless otherwise specificed Symbol Parameter Condition Min Typ Max Units D.C. Supply Current V DD = 12V, Input = 0V 2.5 5 mA V DD = 36V, Input = 0V 6.0 10 mA V DD = 12V, Input = 5V 2.4 5 mA V DD = 36V, Input = 5V 3.0 25 mA Input Threshold 0.8 1.4 2.0 V Input Hysteresis 0.1 V Input Pull-Down Current Input = 5V 10 20 40 µA Enable Threshold 0.8 1.4 2.0 V Enable Hysteresis 0.1 V Fault Output Fault Current = 1.6mA 0.15 0.4 V Saturation Voltage Note 1 Fault Output Leakage Fault = 36V –1 0.01 +1 µA Current Limit Thresh., Low-Side Note 2 30 50 70 mV Current Limit Thresh., High-Side Note 2 30 50 70 mV Gate On Voltage, High-Side V DD = 12V, Note 3 16 18 21 V V DD = 36V, Note 3 46 49 52 V Gate On Voltage, Low-Side V DD = 12V, Note 3 10 11 V V DD = 36V, Note 3 14 15 18 V t G(ON) Gate On Time, Fixed Sense Differential > 70mV 2 5 10 µs t G(OFF) Gate Off Time, Adjustable Sense Differential > 70mV, C T = 0pF 10 20 50 µs t DLH Gate Turn-On Delay, High-Side Note 4 1.4 2.0 µs t R Gate Rise Time, High-Side Note 5 0.8 1.5 µs t DHL Gate Turn-Off Delay, High-Side Note 6 1.2 2.0 µs t F Gate Fall Time, High-Side Note 7 0.6 1.5 µs t DLH Gate Turn-On Delay, Low-Side Note 4 1.7 2.5 µs t R Gate Rise Time, Low-Side Note 8 0.7 1.5 µs t DHL Gate Turn-Off Delay, Low-Side Note 9 0.5 1.0 µs t F Gate Fall Time, Low-Side Note 10 1.0 1.5 µs Note 1 Voltage remains low for time affected by C T. Note 2 When using sense MOSFETs, it is recommended that R SENSE < 50Ω. Higher values may affect the sense MOSFET’s current transfer ratio. Note 3 DC measurement. Note 4 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 0V to 2V. Note 5 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 17V. Note 6 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 20V (Gate on voltage) to 17V. Note 7 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 17V to 2V. Note 8 Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for Gate transition from 2V to 10V. Note 9 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 15V (Gate on voltage) to 10V. Note 10 Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for Gate transition from 10V to 2V. |
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