2N5401G-X-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2N5401

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-001.H



ABSOLUTE MAXIMUM RATING (TA=25C , unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-160

Collector-Emitter Voltage

VCEO

-150

Emitter-Base Voltage

VEBO

-5

Collector Current

-600

Collector Dissipation

SOT-89

500

TO-92

625

Junction Temperature

+150

C

Storage Temperature

TSTG

-55 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC = -100μA, IE = 0

-160

Collector-Emitter Breakdown Voltage

BVCEO

IC = -1mA, IB = 0

-150

Emitter-Base Breakdown Voltage

BVEBO

IE = -10μA, IC = 0

-5

Collector Cut-off Current

ICBO

VCB = -120V, IE = 0

-50

Emitter Cut-off Current

IEBO

VEB = -3V, IC = 0

-50

DC Current Gain (Note)

hFE1

VCE = -5V, IC = -1mA

hFE2

VCE = -5V, IC = -10mA

400

hFE3

VCE = -5V, IC = -50mA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC = -10mA, IB = -1mA

-0.2

IC = -50mA, IB = -5mA

-0.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC = -10mA, IB = -1mA

-1

IC = -50mA, IB = -5mA

-1

Current Gain Bandwidth Product

VCE = -10V, IC = -10mA

f = 100MHz

100

400

MHz

Output Capacitance

COB

VCB = -10V, IE = 0, f = 1MHz

6.0

Noise Figure

IC = -0.25mA, VCE = -5V

RS = 1k, f = 10Hz ~ 15.7kHz

Note: Pulse test: PW < 300μs, Duty Cycle < 2%.



CLASSIFICATION OF hFE2

RANK

RANGE

80-170

150-240

200-400

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