2SB1182G-X-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SB1182

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R209-027.B



ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-40

Collector-Emitter Voltage

VCEO

-32

Emitter-Base Voltage

VEBO

-5

-2

Collector Current

Pulse

ICP

-3

Base Current

-0.6

SOT-89

0.5

Collector Dissipation (TA=25°C)

TO-252

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=-50μA

-40

Collector-Emitter Breakdown Voltage

BVCEO

IC=-1mA

-32

Emitter-Base Breakdown Voltage

BVEBO

IE=-50μA

-5

Collector Cut-Off Current

ICBO

VCB=-20V

-1

μA

Collector Cut-Off Current

ICEO

VCE=-20V

-1

μA

Emitter Cut-Off Current

IEBO

VEB=-4V

-1

μA

DC Current Gain(Note 1)

hFE

VCE=-3V, IC=-0.5A

120

390

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-2A, IB=-0.2A

-0.5

-0.8

Base-Emitter Saturation Voltage

VBE(SAT)

IC=-2A, IB=-0.2A

-1.0

-2.0

Current Gain Bandwidth Product

VCE=-5V, IE=0.5 A, ,f=100MHz

100

MHz

Output Capacitance

COB

VCB=-10V, IE=0 A,f=1MHz

Note 1: Pulse test: PW < 300μs, Duty Cycle < 2%



CLASSIFICATION OF hFE2

RANK

RANGE

120 ~ 270

180 ~ 390

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