2SC3468

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-037.B



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-to-Base Voltage

300

V

Collector-to-Emitter Voltage

300

V

Emitter-to-Base Voltage

5

V

Collector Current

100

mA

Collector Current (Pulse)

200

mA

Collector Dissipation

1.0

W

Junction Temperature

0 ~ +125

°C

Storage Temperature

-65 ~ +125

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0

°C ~70°C operating temperature

range and assured by design from –20

°C ~85°C.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector Cutoff Current

0.1

µA

Emitter Cutoff Current

0.1

µA

DC Current Gain

40

320

Gain-Bandwidth Product

150

MHz

Collector-to-Emitter Saturation Voltage

0.6

V

Base-to-Emitter Saturation Voltage

1.0

V

Collector-to-Base Breakdown Voltage

300

V

Collector-to-Emitter Breakdown Voltage

300

V

Emitter-to-Base Breakdown Voltage

5

V

Output Capacitance

Cob

2.6

pF

Reverse Transfer Capacitance

Cre

1.8

pF



RANK

C

D

E

F

RANGE

40 ~ 80

60 ~ 120

100 ~ 200

160 ~ 320