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2SC3648G-X-AB3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 2SC3648G-X-AB3-R
功能描述  HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS
PDF  5 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

2SC3648G-X-AB3-R 数据表(HTML) 2 Page - Unisonic Technologies

  2SC3648G-X-AB3-R Datasheet HTML 1Page - Unisonic Technologies 2SC3648G-X-AB3-R Datasheet HTML 2Page - Unisonic Technologies 2SC3648G-X-AB3-R Datasheet HTML 3Page - Unisonic Technologies 2SC3648G-X-AB3-R Datasheet HTML 4Page - Unisonic Technologies 2SC3648G-X-AB3-R Datasheet HTML 5Page - Unisonic Technologies  
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2SC3648
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R208-038.D
ABSOLUTE MAXIMUM RATING (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
VCBO
180
V
Collector to Emitter Voltage
VCEO
160
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
0.7
A
Collector Current (Pulse)
ICP
1.5
A
Collector Dissipation
PC
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC =10μA, IE =0
180
V
Collector-Emitter Breakdown Voltage
BVCEO
IC =1, RBE =∞
160
V
Emitter-Base Breakdown Voltage
BVEBO
IE =10μA, IC=0
6
V
Collector Cutoff Current
ICBO
VCB =120V, IE =0
0.1
μA
Emitter Cutoff Current
IEBO
VEB =4V, IC =0
0.1
μA
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =250mA, IB =25mA
0.12 0.4
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC =250mA, IB =25mA
0.85 1.2
V
Output Capacitance
Cob
VCB =10V, f =1MHz
8
pF
DC Current Gain
hFE1
VCE =5V, IC =100mA
100
400
hFE2
VCE =5V, IC =10mA
90
Turn-on Time
tON
See specified Test circuit
50
ns
Storage Time
tSTG
See specified Test circuit
1000
ns
Fall Time
tF
See specified Test circuit
60
ns
Gain-Bandwidth Product
fT
VCE =5V, IC =50mA
120
MHz
CLASSIFICATION OF hFE1
RANK
R
S
T
RANGE
100 ~ 200
140 ~ 280
200 ~ 400



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