5302D

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R213-018. H



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

800

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

10

V

Collector Current

2

A

4

A

Base Current

1

A

2

A

TO-126

12.5

TO-92

1.6

TO-251/ TO-252

25

SOT-223

1

W

Junction Temperature

+150

°С

Storage Temperature

-65 ~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-126

122

TO-92

160

TO-251/ TO-252

100

Junction to Ambient

SOT-223

175

°С/W

TO-126

10

TO-92

80

TO-251/ TO-252

5

Junction to Case

SOT-223

125

°С/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

400

V

Collector-Base Breakdown Voltage

800

V

Emitter-Base Breakdown Voltage

10

V

Collector Cutoff Current

1

μA

Emitter Cutoff Current

1

μA

ON CHARACTERISTICS

10

10

40

DC Current Gain

5

0.5

Collector-Emitter Saturation Voltage

1.1

1.5

V

1.1

Base-Emitter Saturation Voltage

1.2

V

SWITCHING CHARACTERISTICS

Turn On Time

0.15

0.3

μS

Fall Time

0.2

0.4

μS

Storage Time

Duty Cycle<1%

0.5

0.9

μS

DIODE

Forward Voltage Drop

1.4

V

Fall Time

800

μS

Note: Pulsed duration = 300μS, Duty cycle≤2%