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MPD8021 数据表(PDF) 2 Page - Micrel Semiconductor |
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MPD8021 数据表(HTML) 2 Page - Micrel Semiconductor |
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2 / 2 page ![]() 1997 11-5 MPD8021 Micrel 11 Absolute Maximum Ratings DC Input Voltage Negative, Any Pin (V IL), Note 1 .................. VSUB – 0.5V DC Input Voltage Positive ESD Pin (V IH), Note 2 ........................ V + + 0.5V Low-Voltage Supply Differential, Note 3 .................. +16.5V DMOS Output Device Breakdown (BV DSS), Note 4 . +110V DMOS Drain Current Continuous (I D(max)), Note 5 .................................... 0.2A Pulsed (I D(pulse)), Note 6 .......................................... 0.5A DMOS Gate Drive Voltage (V GS(max)), Note 7 ............ ±20V Standard ESD Structure Voltage (V ESD), Note 8 .......... 2kV Storage Temperature (T S) ....................... –65°C to +150°C General Note: Devices are ESD protected; however, handling precau- tions are recommended. Note 1: V SUB is the substrate bias voltage. Note 2: V+ is the positive ESD clamp potential, user specificed up to +100V. Note 3: Maximum voltage across low-voltage analog or digital MOS. Note 4: DMOS source-to-body shorted to substrate at 0V. Note 5: V GS = 15V. Note 6: 5 µs pulse, 10% duty cycle. Note 7: Measured relative to source-to-body short. Note 8: Measured between any two pins. Operating Ratings Ambient Temperature (T A) ....................... –55°C to +125°C Electrical and Physical Summary Bonding Pads .................................................................. 67 2kV ESD Pads ................................................................ 36 Die Size ............................................... 0.222 in. × 0.182 in. CMOS Output Buffer Tiles .............................................. 12 CMOS Analog Tiles ......................................................... 13 High-Power DMOS ................................................ 12@10 Ω Bipolar Devices split-collector PNP ....................................................... 14 NPN ............................................................................. 14 zener diodes ................................................................ 10 CMOS Logic Devices NMOS ....................................................................... 354 PMOS ........................................................................ 354 Resistance P-well ...................................................................... 1M Ω N+ ............................................................................ 20k Ω polysilicon ....................................................... up to 50k Ω Capacitance ................................................................ 45pF Trimming Range ......................................................... 3 bits MPD8021-0002 Kit Part High-Voltage Characterization Array‡ High-voltage NPN transistors ............................................ 4 (includes matching pair) High-voltage PNP transistor .............................................. 1 High-voltage P-channel FETs ........................................... 2 Analog and digital low-voltage MOSFETs ......................... 8 Expitaxial JFET ................................................................. 1 200 Ω and 10Ω high-voltage DMOS transistors................. 3 6V and 12V Zener diodes ................................................. 2 Small Schottky diode ......................................................... 1 ESD input protection structures ........................................ 2 High-value resistor (100k) ................................................. 1 Low-value resistor (7.6k) ................................................... 1 Low-value polysilicon resistor ........................................... 1 ‡ This device is suitable for curve tracer or bench-top characterization of various device types included in the MPD8021 array. This device is a supplement to the design information available in the Internet Design Kit. MPD8021-0001 Kit Part High-Voltage PWM Controller† High-voltage push-pull output stages ................................ 6 with CMOS to high-voltage level shifters and crossover protection logic High-voltage charge pump for high-side drive with integral high-side current mirror Bandgap reference ............................................................ 1 with PTAT voltage output (usable for thermal shutdown) Op amp ............................................................................. 1 Comparators ..................................................................... 4 Floating logic input Undervoltage lockout † Digital cells and miscellaneous components are not accessible from the pins of this device. Ordering Information Part Number Type Temperature Range Package MIC8021-xxxx* custom –55 °C to +125°C customer specified MIC8021-0001 kit part –55 °C to +125°C 68-pin PLCC MIC8021-0002 kit part –55 °C to +125°C 68-pin PLCC * custom part number. Package markings customer specificed. |
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