MPSA92/93

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R201-019.F



PARAMETER

SYMBOL

RATINGS

UNIT

MPSA92

-300

V

Collector-Base Voltage

MPSA93

-200

V

MPSA92

-300

V

Collector-Emitter Voltage

MPSA93

-200

V

Emitter-Base Voltage

-5

V

Collector Current

-500

mA

SOT-89

0.5

W

Collector Dissipation

TO-92/TO-92NL

0.62

W

Junction Temperature

150

°С

Storage Temperature

-55~ +150

°С

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

SOT-89

250

°C/W

Junction to Ambient

TO-92/TO-92NL

200

°C/W

SOT-89

43

°C/W

Junction to Case

TO-92/TO-92NL

83.3

°C/W



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

MPSA92

-300

V

Collector-Base Breakdown

Voltage

MPSA93

-200

V

MPSA92

-300

V

Collector-Emitter Breakdown

Voltage

MPSA93

-200

V

Emitter-Base Breakdown Voltage

-5

V

MPSA92

-0.25 µA

Collector Cut-Off Current

MPSA93

-0.25 µA

Emitter Cut-Off Current

-0.10 µA

ON CHARACTERISTICS

60

80

DC Current Gain(note)

80

Collector-Emitter Saturation Voltage

-0.5

V

Base-Emitter Saturation Voltage

-0.90

V

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product

50

MHz

MPSA92

6

pF

Output Capacitance

MPSA93

8

pF