2SC3669

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R209-015.D



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

80

V

Collector-Emitter Voltage

80

V

Emitter-Base Voltage

5

V

Collector Current

2

A

Base Current

1

A

Collector Power Dissipation

SOT-223/SOT-89

0.5

W

TO-251/TO-252

1

W

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range

and assured by design from –20°C~85°C.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector Emitter Breakdown Voltage

80

V

Collector Cut-Off Current

1.0

μA

Emitter Cut-Off Current

1.0

μA

DC Current Gain

70

240

40

Collector-Emitter Saturation Voltage

0.15

0.5

V

Base- Emitter Saturation Voltage

0.9

1.2

V

Transition Frequency

100

MHz

Collector Output Capacitance

Cob

30

pF

Switching Time

Turn-on Time

DUTY CYCLE ≤ 1%

0.2

μs

Storage Time

1.0

μs

Fall Time

0.2

μs



RANK

O

Y

RANGE

70~140

120~240