2SD879

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R208-010.C



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

20

V

Collector-Emitter Voltage

10

V

Emitter-Base Voltage

6

V

Collector Dissipation

1

W

Collector Current (DC)

3

A

Collector Current (PULSE)

5

A

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Notes: 1. Pulse Condition -> 100 ms single pulse

2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Voltage

30

V

Collector-Emitter Voltage

20

V

Collector-Emitter Voltage

10

V

Emitter-Base Voltage

6

V

Base-Emitter Voltage

0.83

1.5

V

Collector Cut-Off Current

1

A

Emitter Cut-Off Current

1

A

DC Current Gain

140

210

400

Collector-Emitter Saturation Voltage

0.3

0.4

V

Current Gain Bandwidth Product

200

MHz

Output Capacitance

30

pF

Pulse: 1mS