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2SK3666G-AE3-R 数据表(PDF) 1 Page - Unisonic Technologies |
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2SK3666G-AE3-R 数据表(HTML) 1 Page - Unisonic Technologies |
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1 / 4 page ![]() UNISONIC TECHNOLOGIES CO., LTD 2SK3666 Preliminary JFET www.unisonic.com.tw 1 of 4 Copyright © 2015 Unisonic Technologies Co., Ltd QW-R206-109.a N-CHANNEL JUNCTIN SILICON FET DESCRIPTION The UTC 2SK3666 is an N-channel junctin silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK3666 is suitable for low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. FEATURES * Low IGSS * Low CRSS ORDERING INFORMATION Ordering Number Package Pin Assignment Packing 1 2 3 2SK3666G-AE3-R SOT-23 S D G Tape Reel Note: Pin Assignment: A: Anode K: Cathode (1) R: Tape Reel (2) AE3: SOT-23 (3) G: Halogen Free and Lead Free 2SK3666G-AE3-R (1)Packing Type (2)Package Type (3)Green Package MARKING 3666G |
类似零件编号 - 2SK3666G-AE3-R |
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类似说明 - 2SK3666G-AE3-R |
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