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BC856ASG-AL6-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 BC856ASG-AL6-R
功能描述  DUAL PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

BC856ASG-AL6-R 数据表(HTML) 2 Page - Unisonic Technologies

  BC856ASG-AL6-R Datasheet HTML 1Page - Unisonic Technologies BC856ASG-AL6-R Datasheet HTML 2Page - Unisonic Technologies BC856ASG-AL6-R Datasheet HTML 3Page - Unisonic Technologies  
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BC856AS
Preliminary
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R206-108.b
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-65
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current
IC
-100
mA
Peak Collector Current
ICM
-200
mA
Peak Emitter Current
IEM
-200
mA
Power Dissipation
PD
200
mW
Operating Temperature Range
TJ
-65~+150
°C
Storage Temperature
TSTG
-65~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
625
°C/W
Note: Device mounted on FR-4 PCB minimum land pad.
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V(BR)CBO IC=10μA, IB=0
-80
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC=10mA, IB=0
-65
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE=1μA, IC=0
-5
V
ON CHARACTERISTICS
DC Current Gain
hFE
VCE=-5.0V, IC=-2.0mA
125
180
250
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-10mA, IB=-0.5mA
-75
-300
mV
IC=-100mA, IB=-5.0mA
-250 -650
mV
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-10mA, IB=-0.5mA
-700
mV
IC=-100mA, IB=-5.0mA
-850
mV
Base-Emitter Voltage
VBE(ON)
VCE=-5.0V, IC=-2.0mA
-600 -650 -750
mV
VCE=-5.0V, IC=-10mA
-820
mV
SMALL SIGNAL CHARACTERISTICS
Collector-Cutoff Current
ICES
VCE=-80V
-15
nA
ICBO
VCB=-30V
-15
nA
VCB=-30V, TA=150°C
-4.0
µA
Gain Bandwidth Product
fT
VCE=-5.0V, IC=-10mA,
f=100MHz
100
MHz
Collector-Base Capacitance
CCB
VCB=-10V, f=1.0MHz
3
pF
Note: Short duration pulse test used to minimize self-heating effect.



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