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DBC2314G-AG6-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 DBC2314G-AG6-R
功能描述  DIGITAL TRANSISTOR
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

DBC2314G-AG6-R 数据表(HTML) 2 Page - Unisonic Technologies

  DBC2314G-AG6-R Datasheet HTML 1Page - Unisonic Technologies DBC2314G-AG6-R Datasheet HTML 2Page - Unisonic Technologies DBC2314G-AG6-R Datasheet HTML 3Page - Unisonic Technologies  
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DBC2314
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R222-007.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
TR1
VCC
-50
V
TR2
50
V
Input Voltage
TR1
VIN
-12~+5
V
TR2
-6~+40
V
Output Current
TR1
IC
-500
mA
TR2
100
mA
Power Dissipation
PD
200
mW
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
TR1 (PNP)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Input Voltage
VIN(OFF)
VCC =-5V, IOUT =-100μA
-0.3
V
VIN(ON)
VOUT =-0.3V, IOUT =-20mA
-2
Output Voltage
VOUT(ON) IOUT/IIN =-50mA/-2.5mA
-0.1
-0.3
V
Input Current
IIN
VIN=-5V
-3.0
mA
Output Current
IOUT(OFF) VCC =-50V, VIN =0V
-0.5
μA
ON CHARACTERISTICS
DC Current Gain
hFE
VOUT =-5V, IOUT =-50mA
56
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R1
1.54
2.2
2.86
KΩ
Resistor Ratio
R2/R1
3.6
4.5
5.5
Transition Frequency (Note 1)
fT
VCE =-10V, IE =50mA, f=100MHz
200
MHz
TR2 (NPN)
PARAMETER
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Input Voltage
VIN(OFF)
VCC =5V, IOUT =100μA
0.3
V
VIN(ON)
VOUT =0.3V, IOUT =1mA
1.4
V
Output Voltage
VOUT(ON) IOUT/IIN =5mA/0.25mA
0.1
0.3
V
Input Current
IIN
VIN=5V
0.88
mA
Output Current
IOUT(OFF) VCC =50V, VIN =0V
0.5
μA
ON CHARACTERISTICS
DC Current Gain
hFE
VOUT =5V, IOUT =5mA
68
SMALL SIGNAL CHARACTERISTICS
Input Resistance
R1
7
10
13
KΩ
Resistor Ratio
1
2
R
R
3.7
4.7
5.7
Transition Frequency
fT
VCE =10V, IE =−5mA, f=100MHz
250
MHz
Note 1. Transition frequency of the device



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