BU941Z

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R214-022.E



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

350

V

Emitter-Base Voltage

5

V

Collector Current

15

A

Collector Peak Current

30

A

Base Current

1

A

Base Peak Current

5

W

TO-3P

155

W

Total Power Dissipation

TO-220/TO263

150

W

Junction Temperature

+175

C

Storage Temperature

-65 ~ +175

C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Clamping Voltage

350

500

V

100

μA

Collector Cut-Off Current

0.5

mA

Emitter Cut-off Current

20

mA

1.6

1.8

Collector-Emitter Saturation

Voltage

2

V

2.2

2.5

Base-Emitter Saturation Voltage

2.7

V

DC Current Gain

300

Diode Forward Voltage

2.5

V

Functional Test

(see Functional Test Circuit)

10

A

Fall Time

0.5

Storage Time

(see Fig.1)

15

μs

*Pulsed: Pulse duration=300μs, duty cycle 1.5%