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BU941ZG-TQ2-R 数据表(PDF) 4 Page - Unisonic Technologies |
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BU941ZG-TQ2-R 数据表(HTML) 4 Page - Unisonic Technologies |
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4 / 5 page ![]() BU941Z NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 4 of 5 www.unisonic.com.tw QW-R214-022.E TYPICAL CHARACTERISTICS 103 102 4 2 8 6 4 2 8 6 4 2 101 10-1 8 6 4 2 8 6 2 Collector Current, IC(A) DC Current Gain VCE=2V 125°C -40°C TC=25°C 4 8 6 1 103 102 4 2 8 6 4 2 8 6 4 2 101 10-1 8 6 4 2 8 6 2 Collector Current, IC (A) DC Current Gain VCE=10V 125°C -40°C TC=25°C 4 1 6 8 2.5 1.5 3.5 0 100 50 150 Base Current, IB (mA) 0.5 200 4.0 10A 8 6 4 1 2 1.2 1 0.8 0.6 0.4 0.2 1 8 6 4 2 10 Collctor-Emitter Saturation Voltage 0 hFE=100 -40°C 125°C TC=25°C Collector Current, Ic (mA) 1.4 12 Collector-Emitter Saturation Voltage 2.2 2 1.8 1.6 1.4 1.2 1 8 6 4 2 10 Collector Current, IC(A) 0 -40°C 125°C Tc=25°C 2.4 12 10 1 10-1 18 6 4 2 Collector Current, IC(A) Switching Time 10 VCLAMP=300V, VCC=12V, hFE=100, RBE=47Ω, L=7mH, TC=25°C 12 ts t f Base-Emitter Saturation Voltage hFE=100 |
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