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MMDT2907AG-AL6-R 数据表(PDF) 3 Page - Unisonic Technologies

部件名 MMDT2907AG-AL6-R
功能描述  NPN & PNP GENERAL PURPOSE AMPLIFIER
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

MMDT2907AG-AL6-R 数据表(HTML) 3 Page - Unisonic Technologies

  MMDT2907AG-AL6-R Datasheet HTML 1Page - Unisonic Technologies MMDT2907AG-AL6-R Datasheet HTML 2Page - Unisonic Technologies MMDT2907AG-AL6-R Datasheet HTML 3Page - Unisonic Technologies MMDT2907AG-AL6-R Datasheet HTML 4Page - Unisonic Technologies  
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MMDT2907A
Preliminary
DUAL TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R218-028.b
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING CHARACTERISTICS
Turn-on Time
tON
VCC=30V, IC=150mA,
IB1=15mA
30
ns
Delay Time
tD
8.0
ns
Rise Time
tR
20
ns
Turn-off Time
tOFF
VCC=6.0V, IC=150mA,
IB1=IB2=15mA
80
ns
Storage Time
tS
60
ns
Fall Time
tF
20
ns
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.
TR2
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Note 1)
V(BR)CEO IC=-10mA, IB=0
-30
V
Collector-Base Breakdown Voltage
V(BR)CBO IC=-10µA, IE=0
-60
V
Emitter-Base Breakdown Voltage
V(BR)EBO IE=-10µA, IC=0
-5.0
V
Collector Cutoff Current
ICBO
VCB=-50V, IE=0
-30
nA
Emitter Cutoff Current
IEBO
VEB=-3.0V, IC=0
-30
nA
ON CHARACTERISTICS
DC Current Gain
hFE
IC=-1.0mA, VCE=-10V
50
IC=-10mA, VCE=-10V
75
IC=-150mA, VCE=-10V (Note 1) 100
IC=-300mA, VCE=-10V (Note 1) 30
Collector-Emitter Saturation Voltage (Note 1)
VCE(sat)
IC=-150mA, IB=-15mA
-0.4
V
IC=-300mA, IB=-30mA
-1.4
V
Base-Emitter Saturation Voltage (Note 1)
VBE(sat)
IC=-150mA, IB=-15mA
-1.3
V
SMALL SIGNAL CHARACTERISTICS
Current Gain - Bandwidth Product
fT
IC=-50mA, VCE=-20V,
f=100MHz
250
MHz
Output Capacitance
COBO
VCB=-10V, IE=0, f=100kHz
4.0
pF
Input Capacitance
CIBO
VEB=-2.0V, IC=0, f=100kHz
12
pF
Noise Figure
NF
IC=-100µA, VCE=-10V,
RS=1.0kΩ, f=1.0kHz
2.0
dB
SWITCHING CHARACTERISTICS
Turn-on Time
tON
VCC=-30V, IC=-150mA,
IB1=-15mA
30
ns
Delay Time
tD
8.0
ns
Rise Time
tR
20
ns
Turn-off Time
tOFF
VCC=6.0V, IC=-150mA,
IB1=IB2=-15mA
80
ns
Storage Time
tS
60
ns
Fall Time
tF
20
ns
Notes: 1. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%
2. All voltages (V) and currents (A) are negative polarity for PNP transistors.



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