© 1996 Microchip Technology Inc.

Preliminary

DS21132C-page 1

FEATURES

• Single 5.0V supply

• Low power CMOS technology

- 1 mA active current typical

• ORG pin selectable memory configuration

1024 x 8- or 512 x 16-bit organization (93C76)

2048 x 8- or 1024 x 16-bit organization (93C86)

• Self-timed ERASE and WRITE cycles

(including auto-erase)

• Automatic ERAL before WRAL

• Power on/off data protection circuitry

• Industry standard 3-wire serial I/O

• Device status signal during ERASE/WRITE cycles

• Sequential READ function

• 10,000,000 ERASE/WRITE cycles guaranteed

• Data retention > 200 years

• 8-pin PDIP/SOIC package

• Temperature ranges supported

DESCRIPTION

The Microchip Technology Inc. 93C76/86 are 8K and

16K low voltage serial Electrically Erasable PROMs.

The device memory is configured as x8 or x16 bits

depending on the ORG pin setup. Advanced CMOS

technology makes these devices ideal for low power

non-volatile memory applications. These devices also

have a Program Enable (PE) pin to allow the user to

write protect the entire contents of the memory array.

The 93C76/86 is available in standard 8-pin DIP and 8-

pin surface mount SOIC packages.

- Commercial (C):

0

°C to +70°C

- Industrial

-40

°C to +85°C

- Automotive (E)

-40

°C to +125°C

PACKAGE TYPES

BLOCK DIAGRAM

SOIC Package

DIP Package

CS

CLK

DI

DO

PE

ORG

CS

CLK

DI

DO

PE

ORG

1

2

3

4

8

7

6

5

1

2

3

4

8

7

6

5

DO

CS

CLK

Memory

Array

Address

Decoder

Data

Register

Counter

Address

Output

Buffer

Mode

Decode

Logic

Generator

Clock

DI

PE

93C76/86

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