93C46B

DS21172D-page 2

Preliminary

© 1997 Microchip Technology Inc.

1.0

ELECTRICAL

CHARACTERISTICS

1.1

Maximum Ratings*

Storage temperature .....................................-65

°C to +150°C

Ambient temp. with power applied.................-65

°C to +125°C

Soldering temperature of leads (10 seconds) ............. +300

°C

ESD protection on all pins................................................ 4 kV

*Notice: Stresses above those listed under “Maximum ratings” may

cause permanent damage to the device. This is a stress rating only and

functional operation of the device at those or any other conditions

above those indicated in the operational listings of this specification is

not implied. Exposure to maximum rating conditions for extended peri-

ods may affect device reliability.

TABLE 1-1

PIN FUNCTION TABLE

Name

Function

CS

Chip Select

CLK

Serial Data Clock

DI

Serial Data Input

DO

Serial Data Output

Ground

NC

No Connect

Power Supply

TABLE 1-2

DC AND AC ELECTRICAL CHARACTERISTICS

All parameters apply over the

specified operating ranges

unless otherwise noted

Commercial (C)

°C to +70°C

Industrial (I)

°C to +85°C

Automotive (E)

°C to +125°C

Parameter

Symbol

Min.

Max.

Units

Conditions

High level input voltage

2.0

V

(Note 2)

Low level input voltage

-0.3

0.8

V

Low level output voltage

—

0.4

V

High level output voltage

2.4

—

V

Input leakage current

-10

10

µA

Output leakage current

-10

10

µA

Pin capacitance

(all inputs/outputs)

—

7

pF

Tamb = +25

—

1

mA

Operating current

—

1.5

mA

Standby current

—

1

µA

Clock frequency

—

2

MHz

Clock high time

250

—

ns

Clock low time

250

—

ns

Chip select setup time

50

—

ns

Relative to CLK

Chip select hold time

0

—

ns

Relative to CLK

Chip select low time

250

—

ns

Data input setup time

100

—

ns

Relative to CLK

Data input hold time

100

—

ns

Relative to CLK

Data output delay time

—

400

ns

Data output disable time

—

100

ns

Status valid time

—

500

ns

Program cycle time

—

2

ms

ERASE/WRITE mode

—

6

ms

ERAL mode

—

15

ms

WRAL mode

Endurance

—

1M

—

cycles

25

Note 1: This parameter is tested at Tamb = 25

2: This parameter is periodically sampled and not 100% tested.

3: This application is not tested but guaranteed by characterization. For endurance estimates in a specific appli-

cation, please consult the Total Endurance Model which may be obtained on Microchip’s BBS or website.