PUMT1

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R218-001.E

PARAMETER

SYMBOL

RATING

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-40

V

Emitter-Base Voltage

-5

V

Collector Current (DC)

-100

mA

Peak Collector Current

-200

mA

Peak Base Current

-200

mA

Collector Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

CONDITION

MIN

TYP

MAX

UNIT

Collector Cut-Off Current

-100

nA

-10

μA

Emitter Cut-Off Current

-100

nA

DC Current Gain

120

Collector-Emitter Saturation Voltage

-200

mV

Collector Capacitance

Cc

2.2

pF

Transition Frequency

100

MHz

Note: 1. Pulse test: Pulse Width≤300μs, Duty Cycle≤2.0%

2. The following characteristics apply to both TR1 and TR2.