UDT1605

Preliminary

NPN EPITAXIAL SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R208-048.c



PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

140

V

Collector-Emitter Voltage

120

V

Emitter-Base Voltage

10

V

Peak Pulse Current

4

A

Continuous Collector Current

1

A

Linear Derating Factor

1

W

8

mW/°C

Linear Derating Factor

2.8

W

22

mW/°C

Junction Temperature

-55~+150

°C

Storage Temperature Range

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 1)

125

°C/W

Junction to Ambient (Note 2)

45

°C/W

Notes: 1. For a device surface mounted on 25mmx25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

2. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.



PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector-Base Breakdown Voltage

140

V

Collector-Emitter Breakdown Voltage

120

V

Emitter-Base Breakdown Voltage

10

V

Collector Cut-Off Current

100

nA

10

μA

Emitter Cut-Off Current

0.1

μA

Collector Emitter Cut-Off Current

10

μA

Collector-Emitter Saturation Voltage

1

V

1.5

V

Base-Emitter Saturation Voltage

1.8

V

Base-Emitter Turn-On Voltage

1.7

V

DC Current Gain

2K

5K

2K

100K

0.5

Transition Frequency

150

MHz

Input Capacitance

90

pF

Output Capacitance

15

pF

Turn-On Time

0.5

μs

Turn-Off Time

1.6

μs

Note: Measured under pulsed conditions. Pulse width=300µs. Duty cycle≤2%