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UG3KL-AL6-R 数据表(PDF) 2 Page - Unisonic Technologies |
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UG3KL-AL6-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UG3K NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R218-003.B ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) (Note2) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 100 mA Total Power Dissipation(120mW per element must not be exceeded) PD 150 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 v Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The Following Characteristics Apply to Both TR1 and TR2. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) (Note2) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=50μA 50 V Collector-Emitter Breakdown Voltage BVCEO IC=1mA 50 V Emitter-Base Breakdown Voltage BVEBO IE=50μA 5 V Collector Cutoff Current ICBO VCB=50V 0.5 µA Emitter Cutoff Current IEBO VEB=4V 0.5 µA Collector-Emitter Saturation Voltage VCE(SAT) IC/IB=5mA/0.25mA 0.3 V DC Current Transfer Ratio hFE VCE/IC=5V/1mA 100 250 600 Input Resistance R1 3.29 4.7 6.11 KΩ |
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