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UG9JG-AL5-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UG9JG-AL5-R
功能描述  NPN EPITAXIAL TRANSISTOR
PDF  3 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UG9JG-AL5-R 数据表(HTML) 2 Page - Unisonic Technologies

  UG9JG-AL5-R Datasheet HTML 1Page - Unisonic Technologies UG9JG-AL5-R Datasheet HTML 2Page - Unisonic Technologies UG9JG-AL5-R Datasheet HTML 3Page - Unisonic Technologies  
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UG9J
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R221-025.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
100
mA
Collector Power Dissipation (Total rating)
PC
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These characteristics apply to TR1 and TR2.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
ICBO
VCB=50V, IE=0
100
nA
ICEO
VCE=50V, IB=0
500
nA
Emitter Cut-Off Current
IEBO
VEB=10V, IC=0
0.38
0.71
mA
DC Current Gain
hFE
VCE=5V, IC=10mA
50
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=5mA, IB=0.25mA
0.1
0.3
V
Input Voltage (ON)
VIN(ON)
VCE=0.2V, IC=5mA
1.2
2.4
V
Input Voltage (OFF)
VIN(OFF)
VCE=5V, IC=0.1mA
1.0
1.5
V
Transition Frequency
fT
VCE=10V, IE=5mA
250
MHz
Input Resistor
R1
7
10
13
kΩ
Resistor Ratio
R1 / R2
0.9
1.0
1.1
Note: These characteristics apply to TR1 and TR2.



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