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UG9KG-AL6-R 数据表(PDF) 2 Page - Unisonic Technologies |
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UG9KG-AL6-R 数据表(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UG9K DUAL TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R218-008.E ABSOLUTE MAXIMUM RATINGS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 10 V Collector Current IC 100 mA Collector Power Dissipation PC 150 mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Breakdown Voltage BVCBO IC=100µA 50 V VIN(ON) VCE=0.3V, IC=10mA 3 Input Voltage VIN(OFF) VCE=5V, IC=100µA 0.5 V Collector-Emitter Saturation Voltage VCE(SAT) IC/IB=10mA/0.5mA 0.1 0.3 V Collector Cutoff Current ICBO VCB=50V 0.1 µA DC Current Transfer Ratio hFE VCE=5V, IC=5mA 30 Transition Frequency fT VCE=10V, IE=-5mA 250 MHz Input Resistance R1 7 10 13 kΩ Resistor Ratio R2/R1 0.8 1 1.2 |
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