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UT2311G-AE3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 UT2311G-AE3-R
功能描述  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

UT2311G-AE3-R 数据表(HTML) 2 Page - Unisonic Technologies

  UT2311G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT2311G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT2311G-AE3-R Datasheet HTML 3Page - Unisonic Technologies UT2311G-AE3-R Datasheet HTML 4Page - Unisonic Technologies  
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UT2311
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-365.D
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
-4
A
Pulsed Drain Current
IDM
-20
A
Power Dissipation (TA=25°C) (Note 2)
PD
1.25
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface mounted on 1 in 2 copper pad of FR4 board.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (PCB mounted)
θJA
100
°C/W
Note: Surface Mounted on FR4 board t ≤ 5 sec.
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS =0V, ID =-250µA
-20
V
Drain-Source Leakage Current
IDSS
VDS =-16V,VGS =0V
-1.0
µA
Gate-Source Leakage Current
IGSS
VGS =±8V, VDS =0V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS =VGS, ID =-250µA
-0.45
V
VGS =-4.5V, ID =-4.0 A
45
55
mΩ
Static Drain-Source On-State Resistance
RDS(ON)
VGS =-2.5V, ID =-2.5 A
75
85
mΩ
On-State Drain Current
ID(ON)
VDS ≥ -10V, VGS =-4.5V
-6
A
DYNAMIC PARAMETERS
b
Input Capacitance
CISS
970
pF
Output Capacitance
COSS
485
pF
Reverse Transfer Capacitance
CRSS
VDS =-6V, VGS =0 V, f =1.0MHz
160
pF
SWITCHING PARAMETERS
b
Turn-ON Delay Time
tD(ON)
18
ns
Turn-ON Rise Time
tR
45
ns
Turn-OFF Delay Time
tD(OFF)
95
ns
Turn-OFF Fall-Time
tF
VDD =-4V, VGEN =-4.5V, ID =-1A
RL =4Ω, RG =6Ω
65
ns
Total Gate Charge
QG
8.5
12
nC
Gate Source Charge
QGS
1.5
nC
Gate Drain Charge
QGD
VGS =-4.5V, VDS =-6V, ID =-4.0A
2.1
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS =0 V, IS =-1.6A,
-0.8
-1.2
V
Maximum Continuous Drain-Source
Diode Forward Current
IS
-1.6
A
Note: Pulse test; pulse width ≤ 300μs, duty cycle ≤ 2%.



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